Modulation of sulfur vacancies at ZnIn2S4-δ/g-C3N4 heterojunction interface for successive C-H secession in photocatalytic gaseous formaldehyde complete oxidation

Xinwei LI, Yu HUANG, Wingkei HO, Shuwen HAN, Pengge WANG, Shuncheng LEE, Zhuozhi ZHANG

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12 Citations (Scopus)

Abstract

Inspired by formaldehyde (HCHO) complete oxidation in atmospheric environments involving hydroxyl radicals (•OH) engaged in the breakage of the carbon-hydrogen (C-H) bond, Sv-ZnIn2S4-δ/g-C3N4 (Sv-ZIS/CN) composite decorated with sulfur vacancies (S-vacancies, Sv) was designed and fabricated for HCHO elimination at ambient environment. ZnIn2S4 (ZIS) in-situ grows on the g-C3N4 (CN) flats with an electrostatic attraction effect of cationic precursors, leading to the simultaneous construction of heterojunction interface and generation of S-vacancies. The internal electron field formed at the interface accelerate the photocarriers separation for the surface O2 activation which has been profited form S-vacancies, thus promoting the generation of •OH radicals from •O2-→H2O2→•OH route. The photocatalytic HCHO oxidation in the Sv-ZIS/5CN sample is kinetically favorable in the presence of abundant •OH engaged in the successive C-H bond scission route dioxymethylene (DOM)→formates(HCOO-)→CO2 revealed by in-situ DRIFTS, which avoids the generation of undesirable CO and accumulation of intermediates. Copyright © 2023 Elsevier B.V. All rights reserved.

Original languageEnglish
Article number123048
JournalApplied Catalysis B: Environmental
Volume338
Early online dateJun 2023
DOIs
Publication statusPublished - Dec 2023

Citation

Li, X., Huang, Y., Ho, W., Han, S., Wang, P., Lee, S., & Zhang, Z. (2023). Modulation of Sulfur Vacancies at ZnIn₂S₄₋δ/g-C₃N₄ Heterojunction Interface for Successive CH Secession in Photocatalytic Gaseous Formaldehyde Complete Oxidation. Applied Catalysis B: Environmental, 338, Article 123048. https://doi.org/10.1016/j.apcatb.2023.123048

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