Fully integrated matching network with bondwire for power amplifier minimization [Application Notes]

Lok Ki HO; Alan W. L. NG; Wing Shing CHAN; Wai Yin Steve MUNG

doi:10.1109/MMM.2024.3486600

Fully integrated matching network with bondwire for power amplifier minimization [Application Notes]

Lok Ki HO
, Alan W. L. NG
, Wing Shing CHAN
, Wai Yin Steve MUNG

Research and Development Office (RDO)

Research output: Contribution to journal › Articles › peer-review

4 Citations (Scopus)

Abstract

This article explores the advancement of wireless communication focusing on the development of high-performance front-end circuits in mature 5G and beyond mobile technologies. It investigates the design of power amplifiers (PAs) and the need for miniaturization because of the rising demand for high data rate applications. The article demonstrates the utilization of bondwires for the fully integrated matching network in PAs to achieve size reduction of the die and package. The use of gallium nitride-based transistors and high-electron-mobility transistors for fully integrated PAs is examined. Copyright © 2025 IEEE.

Original language	English
Pages (from-to)	84-92
Journal	IEEE Microwave Magazine
Volume	26
Issue number	2
Early online date	Jan 2025
DOIs	https://doi.org/10.1109/MMM.2024.3486600
Publication status	Published - Feb 2025

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 9 Industry, Innovation, and Infrastructure

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10.1109/MMM.2024.3486600

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Fully integrated matching network with bondwire for power amplifier minimization [Application Notes]

Abstract

UN SDGs

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